EPC2218 Enhancement-Mode GaN Power Transistors

EPC's 3.2 mΩ, 100 V, 231 Apulsed GaN transistor provides power efficiency and switching frequency

Image of EPC's EPC2218 Enhancement-Mode GaN Power Transistor EPC's EPC2218 transistors and development/evaluation boards supply 100 V, 60 A, and 231 APULSED enhancement-mode GaN FETs. The transistors are only supplied in passivated die form with solder bars and a die size of 3.5 mm x 1.95 mm. The EPC2218 is ideal for 48 VOUT synchronous rectification, Class-D audio, infotainment systems, DC/DC converters, and LiDAR for autonomous cars, robotics, and drones.

Features

  • Higher switching frequency for lower switching losses and lower drive power
  • Higher efficiency provides lower conduction and switching losses, as well as zero reverse recovery losses
  • Smaller footprint allows for higher power
Applications
  • DC/DC converters
  • BLDC motor drives
  • Sync rectification for AC/DC and DC/DC
  • LiDAR/pulsed power
  • Point-of-load (POL) converters
  • Class-D audio
  • LED lighting

EPC2218 Enhancement-Mode GaN Power Transistor

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
GANFET N-CH 100V DIEEPC2218GANFET N-CH 100V DIE58 - Immediate$6.42View Details

Evaluation Boards

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
EVAL BOARD FOR EPC2218EPC9153EVAL BOARD FOR EPC22184 - Immediate$415.05View Details
EVAL BOARD FOR EPC2218EPC90123EVAL BOARD FOR EPC221825 - Immediate$170.11View Details
Published: 2021-01-07