Name: IAUC60N10S5L110ATMA1
Brand: Infineon Technologies
SKU: 448-IAUC60N10S5L110ATMA1TR-ND
Price: 2.0207 EUR
Availability: InStock

N-Channel 100 V 60A (Tc) 88W (Tc) Surface Mount PG-TDSON-8-33

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IAUC60N10S5L110ATMA1
DigiKey Part Number	448-IAUC60N10S5L110ATMA1TR-ND - Tape & Reel (TR) 448-IAUC60N10S5L110ATMA1CT-ND - Cut Tape (CT) 448-IAUC60N10S5L110ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IAUC60N10S5L110ATMA1
Description	MOSFET_(75V 120V( PG-TDSON-8
Manufacturer Standard Lead Time	35 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 60A (Tc) 88W (Tc) Surface Mount PG-TDSON-8-33
Datasheet	Datasheet
EDA/CAD Models	IAUC60N10S5L110ATMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	11mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs	24.1 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1665 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	88W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-33
Package / Case	8-PowerTDFN