Name: IXTP8N65X2M
Brand: IXYS
SKU: IXTP8N65X2M-ND
Price: 4.235 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IXTP8N65X2M
DigiKey Part Number	IXTP8N65X2M-ND
Manufacturer	IXYS
Manufacturer Product Number	IXTP8N65X2M
Description	MOSFET N-CH 650V 4A TO220
Manufacturer Standard Lead Time	41 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 4A (Tc) 32W (Tc) Through Hole TO-220
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	IXYS
Series	Ultra X2
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	32W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Base Product Number	IXTP8