Mosfet Array 1200V (1.2kV) 204A (Tc) 1130W Module
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Mosfet Array 1200V (1.2kV) 204A (Tc) 1130W Module
ROHM 4-pin SiC Power MOSFETs | Digi-Key Daily
ROHM's SiC Power and Gate Driver Solutions

BSM180D12P2C101

DigiKey Part Number
BSM180D12P2C101-ND
Manufacturer
Rohm Semiconductor
Manufacturer Product Number
BSM180D12P2C101
Description
MOSFET 2N-CH 1200V 204A MODULE
Manufacturer Standard Lead Time
27 Weeks
Customer Reference
Detailed Description
Mosfet Array 1200V (1.2kV) 204A (Tc) 1130W Module
Datasheet
 Datasheet
EDA/CAD Models
BSM180D12P2C101 Models
Product Attributes
Type
Description
Select All
Category
Manufacturer
Rohm Semiconductor
Series
-
Packaging
Bulk
Part Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
204A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
23000pF @ 10V
Power - Max
1130W
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
Module
Supplier Device Package
Module
Base Product Number
BSM180
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Quantity
All prices are in EUR
Bulk
QuantityUnit PriceExt Price
1407,21000 €407,21 €
Unit Price without VAT:407,21000 €
Unit Price with VAT:492,72410 €