Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 200 MHz 300 mW Through Hole SPT
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DTD114ESTP

DigiKey Part Number
DTD114ESTP-ND - Tape & Box (TB)
Manufacturer
Rohm Semiconductor
Manufacturer Product Number
DTD114ESTP
Description
TRANS PREBIAS NPN 50V 0.5A SPT
Customer Reference
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 200 MHz 300 mW Through Hole SPT
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Manufacturer
Rohm Semiconductor
Series
-
Packaging
Tape & Box (TB)
Part Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistors Included
R1 and R2
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
200 MHz
Power - Max
300 mW
Mounting Type
Through Hole
Package / Case
SC-72 Formed Leads
Supplier Device Package
SPT
Base Product Number
DTD114
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Obsolete
This product is no longer manufactured.