N-Channel 600 V 9.7A (Ta) 30W (Tc) Through Hole TO-220SIS
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TK10A60W,S4VX

DigiKey Part Number
TK10A60WS4VX-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK10A60W,S4VX
Description
MOSFET N-CH 600V 9.7A TO220SIS
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 9.7A (Ta) 30W (Tc) Through Hole TO-220SIS
Datasheet
 Datasheet
EDA/CAD Models
TK10A60W,S4VX Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TK10A60
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In-Stock: 112
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
13,15000 €3,15 €
501,59420 €79,71 €
1001,44370 €144,37 €
5001,18010 €590,05 €
1 0001,09541 €1 095,41 €
2 0001,07575 €2 151,50 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:3,15000 €
Unit Price with VAT:3,81150 €