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Diode 650 V 6A Through Hole TO-220-2L
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TRS6E65H,S1Q

DigiKey Part Number
264-TRS6E65H,S1Q-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TRS6E65H,S1Q
Description
DIODE SIL CARBIDE 650V 6A TO220L
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
Diode 650 V 6A Through Hole TO-220-2L
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
6A
Voltage - Forward (Vf) (Max) @ If
1.35 V @ 6 A
Speed
Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
70 µA @ 650 V
Capacitance @ Vr, F
392pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175°C
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
12,74000 €2,74 €
501,22640 €61,32 €
1001,15000 €115,00 €
5001,14456 €572,28 €
1 0001,04348 €1 043,48 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:2,74000 €
Unit Price with VAT:3,31540 €