N-Channel 600 V 7A (Tc) 78W (Tc) Through Hole TO-251AA
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SIHU7N60E-GE3

DigiKey Part Number
742-SIHU7N60E-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHU7N60E-GE3
Description
MOSFET N-CH 600V 7A IPAK
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 7A (Tc) 78W (Tc) Through Hole TO-251AA
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-251AA
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
SIHU7
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In-Stock: 2 240
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
12,20000 €2,20 €
101,42000 €14,20 €
1000,97210 €97,21 €
5000,78070 €390,35 €
1 0000,71916 €719,16 €
3 0000,64108 €1 923,24 €
6 0000,63469 €3 808,14 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:2,20000 €
Unit Price with VAT:2,66200 €