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Reengineering Silicon Power Devices: How to improve both conduction and switching losses
This deep-dive explains how to reduce both conduction and switching losses without traditional tradeoffs. Learn key concepts like RDS(on), QSW, and EOSS, and see real boost converter test results demonstrating improved efficiency, performance, and reliability versus conventional silicon and GaN solutions.
Part List
| Image | Manufacturer Part Number | Description | FET Type | Technology | Drain to Source Voltage (Vdss) | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|---|---|---|
 |  | IS20M5R5S1T | MOSFET N-CH 200V 151A TOLL | N-Channel | MOSFET (Metal Oxide) | 200 V | 100 - Immediate | $8.28 | View Details |
|  | IS20M6R3S1P | MOSFET N-CH 200V 172A TO-220 | N-Channel | MOSFET (Metal Oxide) | 200 V | 982 - Immediate | $6.34 | View Details |
|  | IS20M028S1C | MOSFET N-CH 200V 45A PDFN-8 | N-Channel | MOSFET (Metal Oxide) | 200 V | 3126 - Immediate | $3.12 | View Details |
| | IS20M028S1P | MOSFET N-CH 200V 41A TO-220 | N-Channel | MOSFET (Metal Oxide) | 200 V | 991 - Immediate | $3.58 | View Details |
| | IS15M7R1S1C | MOSFET N-CH 150V 133A PDFN-8 | N-Channel | MOSFET (Metal Oxide) | 150 V | 0 | $5.01 | View Details |
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